inchange semiconductor isc product specification isc silicon npn power transistor 2SC2624 description high collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high switching speed high reliability applications switching regulators ultrasonic generators high frequency inverters general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 450 v v ceo collector-emitter voltage 400 v v ceo(sus) collector-emitter voltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 5 a i b b base current-continuous 1.5 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.17 /w isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2624 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 10ma ; i b = 0 400 v v ceo(sus) collector-emitter sustaining voltage i c = 1a ; i b = 0 400 v v (br)cbo collector-base breakdown voltage i c = 1ma ; i e = 0 450 v v (br)ebo emitter-base breakdown voltage i e = 0.1ma ; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a b 1.2 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a b 1.5 v i cbo collector cutoff current v cb = 450v ; i e =0 1.0 ma i ebo emitter cutoff current v eb = 7v; i c =0 0.1 ma h fe dc current gain i c = 5a; v ce = 5v 10 switching times t on turn-on time 1.0 s t stg storage time 2.0 s t f fall time i c = 4a , i b1 = -i b2 = 0.8a r l = 20 ;p w =20 s duty cycle 2% 1.0 s isc website www.iscsemi.cn 2 www.iscsemi.cn
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